S29GL064N

S29GL064N, 64 Megabit,
3.0-Volt only Page Mode Flash Memory
Featuring 110 nm MirrorBit Process Technology

The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Specifications

Device Architecture
Density	64Mb
Voltage	3 Volts
Interface	Page-mode
Process Technology	110 nm MirrorBit® technology
Bus Width	x8/x16
Sector Type	Uniform/Boot Sector
Basic Ordering Options
Initial Access Times (ns)	90/110
Page Mode Access Times (ns)	25
Package Options	48-ball Fine-Pitch BGA 48-pin TSOP 56-pin TSOP 64-ball Fortified BGA
Temperature Range	-40°C to +85°C

Data Sheets

Downloads	Document code	Last updated
s29gl-n_01_10_e.pdf	s29gl-n_01_10_e	Apr. 10, 2008

Simulation Models

SOMA	IBIS	VHDL & Verilog-HDL
	S29GL064N IBIS	S29gl064n01.zip S29gl064n06.zip