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S29GL256N
S29GL-N Flash memory with MirrorBit® technology
The S29GL512/256/128N family of devices are 3.0V single power flash memory
manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit,
organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256
Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a
128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have
a 16-bit wide data bus that can also function as an 8-bit wide data bus by using
the BYTE# input. The device can be programmed either in the host system or in
standard EPROM programmers.
| Density |
256Mb
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| Voltage |
3 Volts
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| Interface |
Page-mode
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| Process Technology |
110 nm MirrorBit® technology
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| Bus Width |
x8/x16
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| Sector Type |
Uniform
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| Initial Access Times (ns) |
90/100/110
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| Page Mode Access Times (ns) |
25/30
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| Package Options |
56-pin TSOP
64-ball Fortified BGA
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| Temperature Range |
-40°C to 85°C
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