S29NS016J

128 Megabit (8 M x 16-Bit), 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories

The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16 Mbit. 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a single VCC of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VPP may be used for faster program performance if desired. These devices can also be programmed in standard EPROM programmers.

Specifications

Device Architecture
Density	16Mb
Voltage	1.8 Volts
Interface	Burst-mode Simultaneous Read/Write
Process Technology	110 nm floating gate technology
Bus Width	x16
Sector Type	Boot Sector
Basic Ordering Options
Initial Access Times (ns)	65/70
Burst Mode Access Times (ns)	11/13.5
Temperature Range	-25°C to +85°C

Data Sheets

Downloads	Document code	Last updated
s29ns-j_00_a11_e	s29ns-j_00_a11_e	Feb. 07, 2007

Simulation Models

SOMA	IBIS	VHDL & Verilog-HDL
S29NS016J	S29NS016J_IBIS	S29ns016j