This product will be retired and is not recommended for new designs. Please use the following replacement product(s):
S29NS256R

S29NS256N

S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory

The S29NS256N, S29NS128N, and S29NS064N are 256 Mb, 128 Mb, and 64 Mb (respectively) 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 16,777,216, 8,388,608, and 4,194,304 words of 16 bits each. These devices use a single VCC of 1.70 to 1.95 V to read, program, and erase the memory array. A 9.0-volt ACC, also referred to as VPP in older documents, may be used for faster program performance if desired. These devices can also be programmed in standard EPROM programmers.

Specifications

Device Architecture
Density	256Mb
Voltage	1.8 Volts
Interface	Burst-mode Simultaneous Read/Write
Process Technology	110 nm MirrorBit® technology
Bus Width	x16
Sector Type	Boot Sector
Basic Ordering Options
Initial Access Times (ns)	80
Burst Mode Access Times (ns)	9/11/13.5
Package Options	48-ball Fine-Pitch BGA
Temperature Range	-25°C to +85°C

Data Sheets

Downloads	Document code	Last updated
s29ns-n_00_a13_e.pdf	s29ns-n_00_a13_e	Feb. 16, 2007

Simulation Models

SOMA	IBIS	VHDL & Verilog-HDL
S29NS256N	s29ns256n_vdc048.ibs	S29ns256n