S29NS256R

S29NS256R

256Mb (16 M x 16 bit), 1.8 V Burst Simultaneous
Read/Write, Multiplexed MirrorBit Flash Memory

The Spansion S29NS01G/512/256/128R are MirrorBit Flash products fabricated on 65 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using multiplexed data and address pins. These products can operate up to 104 MHz and use a single VCC of 1.70 V to 1.95 V that makes them ideal for the demanding wireless applications of today that require higher density, better performance, and lowered power consumption.

Specifications

Device Architecture
Density	256Mb
Voltage	1.8 Volts
Interface	Burst-mode Simultaneous Read/Write
Process Technology	65 nm MirrorBit® Technology
Bus Width	x16
Sector Type	Boot Sector
Basic Ordering Options
Initial Access Times (ns)	80
Burst Mode Access Times (ns)	7.5/9/11.2
Clock Frequency	104MHZ/83MHz/66MHz
Package Options	44-ball Fine-Pitch BGA
Temperature Range	-25°C to +85°C

Data Sheets

Downloads	Document code	Last updated
S29NS-R_00_03_e.pdf	S29NS-R_00_03_e	May. 09, 2008