This product has been retired and is not recommended for new designs.

S29WS064J

128/64 Megabit (8/4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

The S29WS128J/S29WS064J is a 128/64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 8,388,608/4,194,304 words of 16 bits each. The device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VHH on ACC may be used for faster program performance if desired. This device can also be programmed in standard EPROM programmers.

Specifications

Device Architecture
Density	64Mb
Voltage	1.8 Volts
Interface	Burst-mode Simultaneous Read/Write
Process Technology	110 nm floating gate technology
Bus Width	x16
Sector Type	Boot Sector
Basic Ordering Options
Initial Access Times (ns)	55
Burst Mode Access Times (ns)	9/11.2
Clock Frequency	80 / 66 MHz
Package Options	80-ball Fine-Pitch BGA
Temperature Range	-25°C to +85°C

Data Sheets

Downloads	Document code	Last updated
s29ws-j_00_a6_e.pdf	s29ws-j_00_a6_e	May. 11, 2006

Simulation Models

SOMA	IBIS	VHDL & Verilog-HDL
	s29ws064j_async.ibs s29ws064j_sync.ibs	S29ws064j.zip