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Burst-mode and page-mode interface
Multi-Chip-Package (MCP) Solutions
This product will be retired and is not recommended for new designs.
S29WS128N
The WSxxxN family consists of 256 and 128 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory devices, organized as 16 or 8 Mwords of 16 bits. These devices use a single VCC of 1.70 to 1.95 V to read, program, and erase the memory array. A 9.0-volt VHH on ACC may be used for faster program performance if desired. These devices can be programmed in standard EPROM programmers.
| Device Architecture | |
| Density | 128Mb |
| Voltage | 1.8 Volts |
| Interface |
Burst-mode
Simultaneous Read/Write |
| Process Technology | 110 nm MirrorBit® technology |
| Bus Width | x16 |
| Sector Type | Boot Sector |
| Basic Ordering Options | |
| Initial Access Times (ns) | 80 |
| Burst Mode Access Times (ns) | 9/11.2/13.5 |
| Clock Frequency |
80 MHz/66 MHz/54 MHz |
| Package Options |
84-ball Fine-Pitch BGA |
| Temperature Range |
-25°C to +85°C |
| Downloads | Document code | Last updated |
| s29ws-n_00_I0_e.pdf | s29ws-n_00_i0_e | Dec. 03, 2005 |
| SOMA | IBIS | VHDL & Verilog-HDL |
|
s29ws128n_fbga.zip |
S29ws128n.zip S29ws128n.exe |
