S29WS512P

512 Mb (32/16/8 M x 16 bit)
1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory

A Mirrorbit Flash product fabricated on 90nm process technology and capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. It can operate up to 108MHz and use a single Vcc of 1.7 to 1.95 V that makes it ideal for today's demanding wireless applications requiring higher density, better performance and lowered power consumption.

Specifications

Device Architecture
Density	512Mb
Voltage	1.8 Volts
Interface	Burst-mode Simultaneous Read/Write
Process Technology	90 nm MirrorBit® technology
Bus Width	x16
Sector Type	Boot Sector
Basic Ordering Options
Initial Access Times (ns)	54/65/80/110
Package Options	84-ball Fine-Pitch BGA
Temperature Range	-25°C to +85°C

Data Sheets

Downloads	Document code	Last updated
s29ws-p_00_a12_e.pdf	s29ws-p_00_a12_e	Jan. 28, 2008

Simulation Models

SOMA	IBIS	VHDL & Verilog-HDL
	s29ws512p_VBH084_IBIS	S29WS512P.zip