S30MS-R

S30MS04GR
S30MS02GR
S30MS01GR
S30MS512R

S30MS-P ORNANDTMFlash Family

The S30MS-R is a 1.8V single voltage flash memory product manufactured using 65 nm MirrorBit® technology. The S30MS04GR is a 4Gb device, organized as 256M Words or 512MB. The S30MS02GR is a 2Gb device, organized as 128M Words or 256MB.The S30MS01GR is a 1Gb device, organized as 64M Words or 128MB. The S30MS512R is a 512Mb device, organized as 32M Words or 64MB.

Specifications

Device Architecture
Density	512Mb 1Gb 2Gb 4Gb
Voltage	1.8 Volts
Interface	NAND
Process Technology	65 nm MirrorBit™ Technology
Bus Width	x8/x16
Basic Ordering Options
Package Options	48-pin TSOP
Temperature Range	-25°C to +85°C

Data Sheets

Downloads	Document code	Last updated
s30ms-r_00_04_e.pdf	s30ms-r_00_04_e	Nov. 02, 2007

Simulation Models

SOMA	IBIS	VHDL & Verilog-HDL
		S30ms02gr00.zip S30ms02gr01.zip S30ms01gr00.zip S30ms01gr01.zip S30ms512r00.zip S30ms512r01.zip