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S70GL01GN

1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology. Two 512 Megabit (S29GL512N) in a single 64-ball Fortified-BGA package



The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input.

Device Architecture
Density 1Gb
Voltage 3 Volts
Interface Page-mode
Multi-chip product
Process Technology 110 nm MirrorBit™ technology
Bus Width x8/x16
Sector Type Uniform
Basic Ordering Options
Initial Access Times (ns) 110
Page Mode Access Times (ns) 25
Package Options 64-ball Fortified BGA
Temperature Range -40°C to +85°C


Downloads Document code Last updated
s70gl01gn00_00_a2_e.pdf s70gl01gn00_00_a2 May. 21, 2007


SOMA IBIS VHDL & Verilog-HDL
s70gl01gn_lse064.ibs